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NCE80TD65BT Power IGBT

3.000 د.ع
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Description

BU508AF is a high-voltage NPN power transistor designed for horizontal deflection circuits in CRT televisions.

Key Specifications:

• Type: NPN Power Transistor
• Collector-Emitter Voltage: 700 V (open base)
• Peak Collector-Emitter Voltage: 1500 V with base-emitter shorted
• Continuous Collector Current: 8 A
• DC Current Gain (hFE): 6–30 at 100 mA, VCE = 5 V
• Package: SOT199, fully insulated
• Mounting: Through Hole

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