25N120 IGBT Power Transistor

Description

25N120 High-Voltage High-Current N-Channel Insulated Gate Bipolar Transistor (1200V / 25A)

• Transistor Type: IGBT (Insulated Gate Bipolar Transistor)
• Channel Polarity: N-Channel
• Collector-Emitter Voltage (Vces): 1200 V
• Continuous Collector Current (Ic): 25 A (at Tc=100°C) / 50 A (at Tc=25°C)
• Collector-Emitter Saturation Voltage (Vce(sat)): ~1.8 V - 2.5 V
• Package Architecture: Available in multiple form factors (TO-247 / TO-3P Heavy Duty). Please feel free to contact us to confirm our current live stock configuration for your specific board alignment.
• Common Applications: High-power induction cookers, microwave ovens, inverter welding machines, resonant electromagnetic heating systems, and industrial motor speed control drives.