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7N60 N-Channel Power MOSFET

1.500 د.ع
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25N120 IGBT Power Transistor

3.000 د.ع

Description

20N60 High-Voltage High-Current N-Channel Power MOSFET (600V / 20A)

Key Specifications:
  • Transistor Type: MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
  • Channel Polarity: N-Channel
  • Drain-Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 20 A
  • Static Drain-Source On-Resistance (Rds(on)): 0.15 Ω - 0.26 Ω (Max depending on generation)
  • Package Architecture: Available in multiple form factors (TO-220 / TO-220F Fully Isolated / TO-247 Heavy Duty). Please feel free to contact us to confirm our current live stock configuration for your specific board alignment.
  • Common Applications: High-power Switch-Mode Power Supplies (SMPS), heavy-duty inverter welding machines, solar micro-inverters, UPS backup main power stages, and industrial motor speed control drives.

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