Description
30J124 High-Speed N-Channel Insulated Gate Bipolar Transistor (TO-220SIS Package / 600V / 30A / 200A Pulse)
Key Specifications:
- Transistor Type:
IGBT (Insulated Gate Bipolar Transistor) - Channel Polarity:
N-Channel - Collector-Emitter Voltage (Vces):
600 V - Continuous Collector Current (Ic):
30 A - Pulsed Collector Current (Icp):
200 A (Peak/Pulse at 3 µs) - Package Type:
TO-220SIS / TO-220F (Fully Insulated Plastic Through-Hole Case) - Common Applications:
Plasma Display Panel (PDP) television circuit repair, high-efficiency induction cooking appliances, industrial motor drivers, and high-frequency inverters.
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