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2SD669 NPN Power Transistor

1.500 د.ع
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8N60 N-Channel Power MOSFET

1.500 د.ع

Description

2SC6144 High-Current NPN Epitaxial Planar Silicon Transistor (50V / 10A)

Key Specifications:
  • Transistor Polarity: NPN
  • Collector-Emitter Voltage (Vceo): 50 V
  • Collector-Base Voltage (Vcbo): 50 V
  • Continuous Collector Current (Ic): 10 A
  • Pulsed Collector Current (Icp): 15 A
  • Total Power Dissipation (Pc): 25 Watts (with Heat Sink at Tc=25°C)
  • Transition Frequency (fT): 330 MHz
  • Package Architecture: Available in multiple form factors (TO-220F / TO-220ML Fully Isolated). Please feel free to contact us to confirm our current live stock configuration for your specific board alignment.
  • Common Applications: High-speed and high-current switching, automated relay/lamp drivers, DC motor speed controllers, DC-to-DC converters, and power management circuits.

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