Description
2SD1047 High-Power NPN Epitaxial Planar Silicon Transistor (140V / 12A / 100W)
Key Specifications:
- Transistor Polarity:
NPN - Collector-Emitter Voltage (Vceo):
140 V - Collector-Base Voltage (Vcbo):
160 V - Continuous Collector Current (Ic):
12 A - Total Power Dissipation (Pc):
100 Watts - Package Architecture:
Available in multiple form factors (TO-3P / TO-247). Please feel free to contact us to confirm our current live stock configuration for your specific board alignment. - Common Applications:
High-fidelity audio power amplifier output stages (frequently paired as a complementary set with the 2SB817 PNP transistor), general power switching, and voltage regulator circuits.
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